Efficient GaAs tunnel diode as an inter-cell ohmic contact in the tandem Al/sub x/Ga/sub 1-x/As/GaAs

The authors report the growth of GaAs tunnel diodes by atmospheric pressure OMVPE, using diethyl tellurium and carbon tetrachloride as n and p-type dopants respectively, for use as the inter-cell ohmic contact in the monolithic tandem Al/sub x/Ga/sub 1-x/As/GaAs. After annealing under conditions which simulate the growth of the complete tandem structure, the diodes retained a peak current of typically 15.4 A/cm/sup 2/ at 120/spl deg/C, which should enable satisfactory operation of this system for space applications under a concentration of up to 500 suns.<
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