Low carrier removal rates and annealing behavior of thermally diffused p/sup +/n (Cd,S) InP structures after 10/sup 13/ cm/sup -2/ 3 MeV proton irradiation

On bare p/sup +/n (Cd,S) InP diffused solar cells, the authors recorded AMO, 25/spl deg/C V/sub oc/ values exceeding 880 mV. In this work they present some of their most recent results showing much lower carrier removal rates in the emitter of p/sup +/n (Cd,S) diffused structures as compared to p/sup +/n (Zn,S) structures after irradiation with 10/sup 13/ cm/sup -2/, 3 MeV protons. They also show the complete recovery of emitter carrier concentration profiles of p/sup +/n (Cd,S) structures after about 2 months in the dark at room temperature, a behavior not observed for p/sup +/n (Zn,S) structures. The drop in I/sub SC/, FF and efficiency of diffused p/sup +/n (Cd,S) InP cells after proton irradiation is lower than previously reported values for n/sup +/p (Si,Zn) InP cells fabricated by MOCVD or n/sup +/p (S,Zn) InP cells fabricated by diffusion.<
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