Successive charging/discharging of gate oxides in SOI MOSFETs by sequential hot electron stressing of front/back channel

The purpose of this work is to demonstrate that hot electron stressing one channel in a SOI MOSFET can in fact inject charges into the other channel, and it discusses two important applications of this phenomenon: namely, that it can be used as a new tool for the study of the mechanisms of degradation, and for designing erasing schemes for SOI based flash memories. The measurements were performed on partially and fully depleted SIMOX MOSFETs with LDD and channel lengths down to 0.6 /spl mu/m.<
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