Dynamic grain-growth and static clustering effects on dopant diffusion in polysilicon

A two-dimensional simulation model for dopant diffusion in polysilicon has been developed, which includes dopant clustering in grain interiors as well as in grain boundaries. The grain growth model is coupled with the diffusion coefficient of the dopants and the process temperature. For all high dose implantation cases the trapping/emission mechanism in polysilicon and the grain growth are the major effects during thermal treatment processes.<
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