Adaptive mesh generation in three dimensional device simulation

An automatic mesh optimization technique based on an a posteriori error evaluation is incorporated into the 3D device simulator HFIELDS-3D. The discretization error in electric field and current density is used for error indication. Although the calculation method to estimate these errors is simplified and modified to suit prismatic mesh elements, simulation results shows that the mesh can be optimized appropriately for different bias conditions by using unique upper limit values for error indicators.<
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