New DRAM noise generation under half-V/sub cc/ precharge and its reduction using a transposed amplifier

Dynamic RAM (DRAM) data-line interface noise generated during amplification, the key problem in designing 16 Mbit and higher DRAMs, is investigated. It is reported that: (1) in the half-V/sub cc/ approach, specific combinations of signal types (high and low) and CMOS sense-amplifier operating sequences cause interference noise during amplification; (2) interference noise exists in sense amplifiers; and (3) the noise results in a detrimental effect on data holding time characteristics. The interference noise is overcome by a transposed amplifier structure combined with a transposed data-line structure.<
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