Time dependence of switching oxide traps

Metal-oxide semiconductor field-effect transistors (MOSFETs) were irradiated and then annealed under alternating positive and negative bias. The magnitude of the reversible trapped-oxide charge component decayed over the course of several cycles (of 3/spl times/10/sup 3/ s each) in one of two processes studied. The HDL hole trap model is shown to explain these and other recent results.<
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