Optimal noise matching of 0.25 micron gate GaAs MESFETs for low power personal communications receiver circuit designs

0.25 μm GaAs MESFETs are shown to be excellent device candidates for low current, low noise receiver circuits in personal communicators. The measured low current performance of ion-implanted 0.25 μm gate FETs is reported for device gate widths of 100 μm and 200 μm and device bias conditions 0.5 V