All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm

We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorption change using this all-binary modulator.