Defect-free InP films on Si substrates obtained by hydride vapor phase conformal growth

InP films directly grown on Si substrates present high dislocation densities, resulting from the InP/Si lattice mismatch and the difference in thermal expansion coefficients between InP and Si. In order to yield a low defect density, we use a novel technique of crystal refining named conformal growth. It is based on selective epitaxy of InP on GaAs seeds directly grown by MOCVD on Si substrates. The Hydride Vapor Phase Epitaxy (HVPE) InP deposition is confined in between a dielectric or poly-Si cap and the self passivated Si surface itself. The sample preparation, as well as the method used, is described. The results of Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), and chemical revelation of defects, are also presented and discussed.<
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