0.1 /spl mu/m delta-doped MOSFET using post low-energy implanting selective epitaxy

Delta-doped NMOSFETs with 0.1 /spl mu/m gate length were fabricated by using Post Low-energy Implanting Selective Epitaxy (PLISE). Non-doped epitaxial channel layers were grown by UHV-CVD after BF/sub 2/ ion implanting at 10 keV. The delta-shaped doping configuration suppresses short-channel effects and reduces the junction capacitance. It allows the switching speed one and a half times faster than conventional approaches. The minimum gate delay is 7.2 ps at 2.5 V for an NMOS ring oscillator with a 10 /spl mu/m gate width and a 1 K/spl Omega/ load.<
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