A CMOS-compatible, low power and low noise gated BJT on TFSOI substrate

A novel shallow buried channel gated BJT has been fabricated on SIMOX wafers. The fabrication is simple and highly compatible with a typical SOI CMOS process flow. The device has low turn-on voltage, ideal BJT I-V characteristics with current gain higher than 1000, and 1.5 times better transconductance and current drive than a SOI NMOS of the same dimensions. Careful measurements show that the buried channel device has a noise performance an order of magnitude better than a surface channel gated BJT. This device is suitable for low power applications, especially those with both analog and digital elements.<
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