New method of global planarization for Si ULSI

In this paper, a new method for obtaining global planarization of patterned Si ULSI wafers is described. This method is unique in that it is very simple, clean, and potentially high throughput. Here we report on the excellent planarization results obtainable. The key idea is a contact scheme for applying and planarizing a sacrificial layer over the patterned wafer. A critical element has been the use of an optical flat coated with a monolayer of release agent.<
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