Adhesion layerless submicron Al damascene interconnections using novel Al-CVD

Adhesion layerless submicron damascene interconnection has been realized by using a combination of novel Al-CVD and CMP technique. A new nucleation method with tetrakis-dimethyl-amino titanium (TDMAT) gas pretreatment has enabled Al-CVD to fill Al in trenches without using a glue layer. As a result, this technology achieved Al damascene interconnections with low specific line resistance as low as 600 /spl Omega//cm with half micron line width and an aspect ratio of 3. This specific line resistance is one-third of that for conventional reactive ion etched Al line with an aspect ratio of 1.<
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