A high performance 30 V extended drain RESURF CMOS device for VLSI intelligent power applications

For the first time, high-performance, 30 V rated high voltage CMOS Lateral DMOS (LDMOS) devices for both high-side and low-side driver applications have been demonstrated. They utilize a simple twin-well single-tank, one level metal, 2.0 /spl mu/m CMOS process to optimize both N and P channel High Voltage (HV) devices simultaneously. This employs a self-aligned, Extended Drain (ED) Reduced surface Field (RESURF) approach to realize the best performance of both N and P channel devices. 1000 /spl Aring/ gate oxide has achieved the specific on-resistance (Rsp(on)) of 0.49 m/spl Omega/-cm/sup 2/ for N-ch (7.5 pm pitch) and 1.9 m/spl Omega/-cm/sup 2/ for P-ch (8.0 /spl mu/m pitch), and avalanche breakdown voltage of 36 V for N-ch and 44 V for P-ch devices respectively. This is the best 30 V rated HV-CMOS device performance level reported for RESURF LDMOS devices.<
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