Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometer

Measurements of deep level spectra for high resistivity silicon detectors irradiated by high fluence fast neutrons (up to 10/sup 14/ n/cm/sup 2/) have been performed using a thermally stimulated current (TSC) spectrometer. Nine new defect levels with peaking temperatures of respectively 26 K, 34 K, 41 K, 47 K, 90 K, 110 K, 135 K, 147 K and 155 K begin to appear for fluences over 10/sup 13/ n/cm/sup 2/. All peaks are strongly dependent on the filling forward voltage V/sub fill/, or injection current, especially for high fluences. Energy levels inside the band gap and trap concentrations corresponding to each of the TSC peaks totaling at most 18, have been studied systematically and possible relations to lattice defects have been discussed.<
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