DC and transmission line models for a high electron mobility transistor

Two improved DC models are developed to describe the output I-V (current-voltage) characteristics and small-signal parameters of a GaAs high-electron-mobility transistor (HEMT). A simple analytical, nonlinear, charge-control model for a two-dimensional electron gas is introduced and included in one of the DC models. The HEMT is modeled as a transmission line for the microwave-frequency AC analysis, and its microwave performance is predicted by the parameters obtained from fitting DC characteristics. Both DC and AC model predictions show a good agreement with experimental results for a 0.3- mu m GaAs HEMT.<
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