Hot carrier transport effect in Schottky-barrier diode grown by MBE

Hot-electron transport effects in Schottky-barrier diodes grown by molecular-beam epitaxy (MBE) were investigated. Comparisons with experimental results for an Al-n/sup +/ GaAs diode shows that terminal currents obtained using the Monte Carlo (MC) method agree well with experiment and are higher than those of conventional analysis for the forward-bias condition. A much higher thermionic-emission velocity at the Schottky was obtained using the MC analysis compared to previously published results. It is argued that these hot-electron transport effects should be included when analyzing device physics and current-voltage characteristics of Schottky-barrier diodes grown by MBE.<
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