Electronic component response to energetic heavy ions

Charge collection in electronic circuits struck by heavy ions ranging from 1 MeV/A to 600 MeV/A is experimentally studied. Data are discussed in terms of collection depth as a function of ion range and LET. Energy deposited by relativistic (>100 MeV/A) heavy ions in thin silicon detectors or in the circuits differs from the one calculated by energy loss. This effect is discussed and compared with simplified model calculations proposed by M.A. Xapsos (see IEEE Trans. Nucl. Sci, vol. NS-39, p. 1613-21, 1992).<
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