Strained layer (1.5 μm) InP/InGaAsP lasing opto-electronic switch (LOES)

We present for the first time a lasing opto-electronic switch (LOES) fabricated in the InP/InGaAsP system. In this device the active region is composed of four 63 /spl Aring/ compressively strained quantum wells. A lasing threshold of 104 mA, or 6933 A/cm
²
, has been observed at a temperature of 298 K, with an external differential quantum efficiency of 14%. The lasing wavelength is centered at 1.52 μm. The current-voltage characteristics manifest pronounced differential negative resistance, characterized by switching and holding voltages of 6.8 V and 1.6 V, respectively, and a switching current density of 33 A/cm
²
. The OFF and ON state resistances are approximately 150 k/spl Omega/ and 4 /spl Omega/, respectively.