Enhancement of resolution and linearity control of contact-hole resist patterns with surface-active developer

The resolution enhancement of contact-hole resist patterns featuring precise linear correlation between mask size and resist-pattern size by employing a surface-active developer is presented. The addition of surfactant improves the wettability of the developer, thus enabling the solution to penetrate narrow spaces. The optimum surfactant concentration in developer leads to superior resist performance. This technology for contact-hole patterning results in high resolution, high sensitivity, and a wide process margin for ULSI manufacturing.<
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