BILOW-simulation of low-temperature bipolar device behavior

The BILOW simulation program for investigating bipolar transistor behavior in the temperature range 77-300 K is discussed. Differences between the numerical approaches required for simulation of low-temperature behavior compared to room-temperature simulation are presented. Efficient numerical models for the physical parameters in the carrier transport equations and Poisson's equation for the temperature range of 77-300 K, including a new highly accurate numerical model for the temperature and doping concentration dependence of carrier mobility, are discussed. A temperature- and doping-concentration-dependent model for apparent bandgap narrowing is also discussed. The internal characteristics of a typical bipolar transistor are simulated over the 300-77 K range. The behavior of current gain beta and the unity gain frequency f/sub T/ versus collector current density for different temperatures are calculated and discussed.<
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