Operating characteristics of GaAs/AlGaAs FET-SEED smart pixels

We have realized monolithic optically addressed integrated circuits. The optical element is a p-i-n multiple quantum well (MQW) device designed for normal incidence operation as both a detector and an optical modulator for 850 nm light. Electronic circuits are realized in GaAs/AlGaAs doped-channel heterojunction field effect transistors (HFETs) with buffered FET logic. Experimental data for various types of circuits are shown that demonstrate 2 Gb/s operation under electrical drive, <50 fJ input optical switching energy at 200 Mb/s, and circuit densities of up to 44 FETs.<
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