Measurement and modeling of self-heating effects in SOI nMOSFETs

Self-heating effects in SOI nMOSFETs are measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of the analytical model, and is found to be a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. This work facilitates the optimization of these dimensions to improve device cooling, and provides the foundation for the calculation of circuit parameters for dynamic operation from static device characterization data. Self-heating effects do not appear to limit SOI circuit performance, but might influence device design for 0.25 mu m technologies and below.<
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