Hot-carrier effects in fully-depleted SOI nMOSFETs

Hot-electron gate current in SOI nMOSFETs has been measured as a function of back-gate bias, silicon film thickness, and substrate doping. Gate currents are reduced in fully-depleted SOI and in thinner silicon films, indicating a reduction in drain electric field, as compared to partially-depleted and bulk devices. Hot-electron degradation confirms some of the trends observed in gate current, however, additional degradation mechanisms in SOI complicate the evaluation of device lifetime.<
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