Series resistance and effective gate length extraction on short-channel PMOS devices at liquid nitrogen temperature

A simple method is presented which allows to extract the effective channel length and the gate voltage dependent series resistance of p-channel MOSFETs at low temperature. The method is used on devices with mask channel lengths from 0.6 to 2.0 /spl mu/m, operating at room and at liquid nitrogen temperatures, and it is compared with conventional methods. The series resistance decreases and the effective channel length increases in these devices when the temperature is lowered from 300 to 77 K.<
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