Assessment of electro-static discharge robustness based on the monitoring of lattice temperature of silicon

In this paper, we demonstrate that it is possible to develop an optimum ESD protection device by comparing the relative ESD robustness of each device, based on the monitoring of the peak temperature correlated with the peak power density. The methodology, supported by measurement data, could give an extra degree of freedom to IC designers confronted with the troublesome ESD phenomenon.<
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