Application of the first-order bipolar model to harmonic distortion analysis of HBT's

Although large-signal models for GaAs MESFETs have been developed extensively, the same is not true for heterojunction bipolar transistors (HBT's). A first-order model, based on first-order device physics, is used for harmonic distortion analysis of an InGaAs/InAlAs/InP inverted HBT. It is shown that the first-order model is adequate at medium power levels and inadequate at higher power levels where the device is driven into hard saturation and cutoff.<
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