Flow modulation growth of III-V compound semiconductors using a multichamber OMVPE reactor

The flow modulation growth of high purity InP and GaAs based III-V compound semiconductors is demonstrated using a multichamber organometallic vapor phase epitaxy (OMVPE) apparatus. Flow modulation is performed by rotating substrates through spatially separated group III and group V rich zones without valve switching. This system has multiwafer capability and excellent compositional and thickness uniformity. In addition, using the appropriate flow conditions, phosphide and arsenide based superlattice structures can also be produced without the use of mechanical valve switching. High purity InP and GaAs have been realized, yielding low temperature (77 K) mobilities exceeding 110,000 and 115,000 cm/sup 2V s, respectively. Excellent transport and optical properties were also observed for GaInP-GaAs and GaInAs-InP structures. The multichamber reactor is a useful tool for both research and manufacturing of optoelectronic and high speed compound semiconductor devices.<
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