Signal simulations for double-sided silicon strip detector

Signals resulting from the passage of minimum ionizing charged particles through double-sided silicon strip detectors are simulated, including the effects of Landau fluctuations and the drift of electrons and holes in the electric and magnetic fields inside the detector. Induced currents are integrated, shaped, and discriminated after addition of random electrical noise, and the timing of signals is obtained. Using the results of many Monte-Carlo-generated events, efficiencies, position resolutions, and means are evaluated as functions of the threshold, the signal-to-noise ratio, the amplifier shaping time, and the data storage time-window. The resolution expected is about 10 mu m and the inefficiency is less than 1% for realistic operating conditions. These values, as well as systematic shifts in assigned mean positions, are not very sensitive to small changes in operating parameters, e.g., discriminator thresholds or circuit rise times.<
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