Measurement of interstrip and coupling capacitances of silicon microstrip detectors

The authors present a set of measurements of the capacitances on silicon microstrip detectors which are important for the operation of the detectors. Various strip widths on both the junction and the ohmic side and widths of blocking p+ implant on the ohmic side have been implemented on test detectors. The interstrip, body, and coupling capacitances of the strips were frequency dependent. SPICE was used to simulate the resistive and capacitive network represented by the detectors, and good agreement between measurement and simulation was found. The detectors were irradiated with ionizing radiation to test the radiation hardness of the design. The noise increase induced in a fast low-noise amplifier due to the capacitive load of different strip geometries was measured. The results agree with those obtained using discrete external capacitors.<>