A comparative study of n/sup +/ ohmic contact resistance for PdInGe and NiGeAu metallizations on GaAs

NiGeAu and PdInGe metallizations are used for n/sup +/ ohmic contacts to GaAs. One-dimensional analytic and two-dimensional numerical analyses are presented using experimental data obtained from transmission line and cross bridge Kelvin test structures. Results from the 1-D and 2-D models show that the former analysis overestimates the specific contact resistance by at least an order of magnitude. This discrepancy is shown to be test structure dependent and metallization independent.<
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