Hot carrier effects on analog performance of N- and P-MOSFET's with oxynitride gate dielectrics

In this paper we report the impact of hot-carrier stress on analog performance of n- and p-MOSFET's with conventional oxide, NH/sub 3/-nitrided oxide (RTN) and reoxidized nitrided oxide (RTN/RTO) as gate dielectrics. Changes due to hot-carrier stress in crucial analog parameters viz., drain output resistance, voltage gain, and input offset voltage of a source coupled differential MOSFET pair are investigated. Results show that RTN/RTO gate dielectrics suppress degradation of analog parameters in n-MOSFET's but increase it slightly in p-MOSFET's, as compared to conventional oxide MOSFET's.<
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