A high power IGBT module for traction motor drive

A 2000-V, 300-A insulated-gate bipolar transistor (IGBT) module consisting of six IGBT chips and two soft-and-fast recovery diode (SFD) chips has been fabricated for the inverter of a traction motor. The module structure and chip layout were designed to provide sufficient reliability and uniform operation among chips. The main electrical characteristics which were obtained from the tradeoff relations between on-state voltages and switching losses of 2000-V chips, namely, a saturation voltage of 3.5 V, a forward voltage of 2.7 V, and a typical turn-off time of 5 mu s, are well suited to driving a motor at a high frequency.<
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