Developments in modern high power semiconductor devices

The present state and future direction of high-power semiconductor devices (>or=500 kVA) are discussed. To characterize the best choice of power devices, a figure of merit is proposed that takes into account thermal and structural factors of the package. Using this parameter, bipolar junction transistors, insulated-gate bipolar transistors (IGBTs), and gate-turn-off thyristors (GTOs) are compared. A realistic approach for a high-power device superior to a GTO is developed using a flat package type similar to that for GTOs. A 2500-V, 100-A IGBT, assembled into an advanced flat package called a microstack, has been designed and demonstrated. This technology can also be applied to high-power MOS gate-controlled devices for high-power inverters over one MVA.<
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