A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications

A metal-semiconductor-metal detector with a InGaAs/GaAs superlattice active layer showing efficient photoresponse up to 1.35 mu m is discussed. The active layer with an In composition of approximately 64% is grown by molecular beam epitaxy on a GaAs substrate at 460 degrees C. The large size detector (200*200 mu m/sup 2/) shows bias-dependent DC gain, fast response speed (FWHM <50 ps), and reasonably low dark current.<
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