Electron transport properties of Ga/sub 0.51/In/sub 0.49/P for device applications

We present Monte Carlo calculations of steady-state and transient electron transport properties of Ga/sub 0.51/In/sub 0.49/P. We have made a simulation-based comparison between Ga/sub 0.51/In/sub 0.49/P and Al/sub x/Ga/sub 1-x/As(x=0.2, 0.3). Our Monte Carlo data show that transport properties of G/sub 0.51/In/sub 0.49/P are favorable, and when the other advantages of the GaInP/GaAs system are also taken into account, this material is a good choice to replace Al/sub x/Ga/sub 1-x/As(x/spl ges/0.3). We have also calculated electron drift and Hall mobilities in Ga/sub 0.51/In/sub 0.49/P as a function of impurity concentration and temperature, and determined the effects of different scattering mechanisms on the low-field mobility. Calculated results are in good agreement with the measurements on metal organic chemical vapor deposition (MOCVD) grown samples with Hall mobilities within a factor of 0.5 of the calculated theoretical limit. It has also been found that alloy scattering is an important mobility degrading mechanism in lightly doped material at low temperatures.<
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