Analysis of current leakage in InGaAsP/InP buried heterostructure lasers

The mechanism of current leakage at high temperatures in InGaAsP/InP buried heterostructure (BH) lasers with p-n-p-n current-blocking structures is analyzed using two-dimensional computer simulation. It is found that no junction in the blocking layers is reverse-biased and that current confinement is due to electrically floating regions in the blocking structures. To minimize the leakage current in these BH lasers, it is necessary to decrease the device width and the connection length between the blocking and cladding layers and to increase the doping level and thickness of the blocking layers.<
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