A superluminescent diode at 1.3 /spl mu/m with very low spectral modulation

An edge-emitting superluminescent diode has been fabricated from an MOCVD-grown InGaAsP/InP double heterostructure, for light emission at 1.3 /spl mu/m. Using a ridge-waveguide geometry with an integrated absorber, the goals of high power coupled into a single-mode fiber and very low spectral modulation are fulfilled. Interferometric measurements of the residual modulation determine the location of internal optical reflections in the device. The results are interpreted and compared to the predictions of a transmission-line model.<
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