Random telegraph signals in accumulation-mode SOI/nMOSFETs

Random telegraph signals (RTS's) arising from interfacial defects in small accumulation-mode SOI/nMOSFETs have been studied. By analyzing the average capture time of each RTS as a function of both the front-gate and back-gate voltages, the authors are able to distinguish between defects at the front interface from those at the back interface. In contrast to the RTS's typically observed in enhancement-mode MOSFETs where only those interfacial defects within an energy range close to the Si band edge can be measured, the use of the accumulation-mode SOI/nMOSFET makes it possible to probe interface traps near midgap.<
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