Fabrication of SOS MOSFETs using two-step doping with excimer laser

Using two-step doping with excimer laser, p-channel MOSFETs were fabricated in thin silicon films on sapphire (SOS). Source and drain p/sup +/ layers were formed using two-step doping with only one melting pulse of excimer laser. Devices were processed at room temperature except for the LPCVD gate oxide deposition at 450/spl deg/C. High-quality thin film transistors (TFTs) were fabricated with on/off current ratio of 7 and a field effect hole mobility of 145 cm/sup 2//V s.<
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