Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

The properties of (AlGa)/sub 0.5/In/sub 0.5/P, strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures, and single quantum well (QW) laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, prepared by low pressure organometallic vapor phase epitaxy, are described. The influence of biaxial strain upon the relative positions of the valence band edges are examined by analyzing the polarized spontaneous emission. Laser diodes with wavelength 620>