Effects of well number in 1.3-/spl mu/m GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers

Effects of well number in 1.3-/spl mu/m GaInAsP/InP GRIN-SCH compressively strained-layer quantum-well lasers were investigated from the viewpoint of the crystal quality of the strained-layer quantum wells and low threshold current operation at high temperature. As a result, we find that the optimum well number that gives the minimum threshold current increases with operating temperature and it was limited to the degradation of crystal quality of the quantum wells due to the critical thickness. A very high CW operating temperature of 170/spl deg/C was obtained. A very high output power of over 300 mW was also achieved.<
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