Reliability of 0.1 mu m InP HEMTs

The results of an extensive life test program of state-of-the-art InP HEMTs with 0.1- mu m gate lengths are presented. High-temperature DC life tests revealed at least two degradational and one catastrophic failure mode. A decrease in g/sub m/ was observed which is a function of temperature, and which is greater for devices with higher I/sub dss/. A decrease in I/sub dss/, was observed which was a function of temperature, with an activation energy of 1.25 eV. The catastrophic failures were due to migration of ohmic metal from the contact to the gate. A median life of 30 years at 100 degrees C is predicted from the DC data. A 10000-h, 50 degrees C life test was also run, with little or no RF degradation.<>