Measurements of failure phenomena in inductively loaded multi-cathode GTO thyristors

The free-carrier absorption (FCA) technique is used for mapping of the carrier content in a dual-cathode gate turn-off thyristor (GTO) at different stages of the turn-off cycle. The FCA technique outputs 3-D maps based on 2-D measurements of local carrier concentration. The measurements are time resolved, thus making a transient response converted into a corresponding sequence of carrier maps. The dual-cathode device is shown to be sufficient for determining the transient behavior in a multicathode structure. The destruction mechanism and reasons for turn-off failure are investigated. The GTO device is inductively loaded and asymmetrically gate contacted in order to emulate a realistic mode of operation. The gate-driving conditions are altered, and the importance of the turn-off gain for turn-off failure is established. The case of equal ON-state cathode currents in both segments is particularly highlighted. The influence of snubber circuits is also discussed.<
>