A nonpinchoff gradual channel model for deep-submicron MOSFET's

A drain current model for a short-channel MOSFET, which is named the nonpinchoff model, is proposed. In this model, the effect of the horizontal electric field is precisely taken into account to solve the two-dimensional Poisson's equation. The pinchoff point, where the horizontal electric field tends to infinity in the conventional gradual-channel approximation, disappears in the nonpinchoff model, so that linear and saturation regions are smoothly connected. As a result, the ambiguity of the boundary between the linear region and saturation region in a short channel MOSFET can be understood using a single equation for the drain current.<
>