Low noise device and amplifier characterization for deep space communication applications

A systematic cryogenic on-wafer study of advanced FET technology is performed, and an empirical model for the cryogenic operation of ion-planted MESFET technology is presented. Multistage HEMT (high electron mobility transistor)-based LNAs (low-noise amplifiers) have been fabricated and characterized for operation at Ka-band. The feasibility of broadband on-wafer S-parameter and noise parameter measurement has been demonstrated. Such a measurement tool should provide important data for LNA development.<
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