Effects of surface pretreatment of polysilicon electrode prior to Si/sub 3/N/sub 4/ deposition on the electrical characteristics of Si/sub 3/N/sub 4/ dielectric films

Effects of various surface pretreatments of polysilicon electrode prior to Si/sub 3/N/sub 4/ deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si/sub 3/N/sub 4/ films deposited on rugged and smooth poly-Si are investigated. Surface pretreatments consist of different combinations of HF clean, rapid thermal H/sub 2/-Ar clean, and rapid thermal NH/sub 3/-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H/sub 2/-Ar clean.<
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