Simulation results of a modified MOST structure

A modified MOST (metal-oxide-semiconductor transistor) physical structure that gives higher current and higher transconductance for the same V/sub T/ is suggested. For an n-channel MOST, the suggested structure uses a floating buried n/sup +/ layer below the gate area at a distance approximately equal to the maximum depletion layer width below the silicon-oxide interface. Computer simulation using PISCES-IIB is used to characterize the suggested structure. Results obtained verified the anticipated increase in drain current and transconductance.<
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