A physically-based lumped-charge P- nu -N diode model

The P-v-N diode model is developed systematically from fundamental device equations using the lumped-charge modeling technique. The model includes basic DC and transient characteristics of the diode, such as low and high level injection, end region recombination, forward and reverse recovery. Twelve relatively simple model equations provide static and dynamic information on electron and hole charges, currents and voltages at five different regions inside a discretized device structure. Simple parameter extraction is a unique feature.<
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